物料参数
| Architecture: | DDR-II CIO |
| Bank Switching: | N |
| Burst Length(Words): | 2 |
| ECC: | N |
| Family: | DDR-II CIO |
| Frequency: | 333.0MHz |
| Lead Ball Finish: | Sn/Ag/Cu |
| On-Die Termination: | N |
| Operating Temperature max: | 70.0°C |
| Organization (X x Y): | 8Mb x 18 |
| Qualification: | Commercial |
| Read Latency (Cycles): | 1.5 |
| Data Width: | x 18 |
| Peak Reflow Temp: | 260.0°C |
| Operating Voltage max: | 1.9V |
| Interfaces: | Parallel |
| Density: | 144.0MBit |
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